KMA4D5P20X - P-CH Trench MOSFET
Korea Electronics 2008/10/14 09:56
GENERAL DESCRIPTION
It’s mainly suitable for battery pack or power management in cell phone and PDA.
FEATURES
*VDSS=-20V, ID=-4.5A.
*Drain-Source ON Resistance.
: RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A
: RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3A
*Super High Dense Cell Design for Extremely Low RDS(ON)
It’s mainly suitable for battery pack or power management in cell phone and PDA.
FEATURES
*VDSS=-20V, ID=-4.5A.
*Drain-Source ON Resistance.
: RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A
: RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3A
*Super High Dense Cell Design for Extremely Low RDS(ON)
KMA4D5P20X - P-CH Trench MOSFET
TAG P-Channel,
Trench MOSFET
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