GENERAL DESCRIPTION
The HSD16M64F8V/VA is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II packages is mounted on a 120-pin, double-sided, FR-4-printed circuit board., Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD16M64F8V/VA is a SMM (Stackable Memory Module) designed and is intended for mounting into two 60-pin connector sockets. Synchronous design allows precise cycle control with the use of system clock.
I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES
*Part Identification
- HSD16M64F8V : Stacking Height ( T = 11.3mm )
- HSD16M64F8VA : Stacking Height ( T = 7.3mm )
*Burst mode operation
*Auto & self refresh capability (4K Cycles/64ms)
*LVTTL compatible inputs and outputs
*Single 3.3V ±0.3V power supply
*MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
*All inputs are sampled at the positive going edge of the system clock
*120pin-SMM type FR4-PCB design
*The used device is 16Mx8bit SRAM
*Pin assignment is compatible with
- HSD8M64F8V
- HSD32M64F8V

HSD16M64F8V-13, HSD16M64F8V-F13, HSD16M64F8V-12, HSD16M64F8V-F12, HSD16M64F8V-10, HSD16M64F8V-F10, HSD16M64F8VA-13, HSD16M64F8VA-F13, HSD16M64F8VA-12, HSD16M64F8VA-F12, HSD16M64F8VA-10, HSD16M64F8VA-F10, HSD8M64F8V, HSD32M64F8V
 

HSD16M64F8V - Synchronous DRAM Module, 128Mbyte ( 16M x 64-Bit ) SMM based on 16Mx8 4Banks, 4K Ref., 3.3V