En effet, il comptait fermement sur ce bref séjour diplomatique pour être le premier chef d'Etat à rencontrer, pour la première fois depuis son électionYork avec Timothy Geither, le président de la Réserve fédérale de New York, que la rumeur donne comme possible secrétaire au Trésor dans la future administration."

Il a également évacué sa frustration en faisant un petit jogging dominical conjugal, après avoir rejoint sa Carlita à New York. Cette dernière devait être tout aussi déçue, elle qui a profité des activités de son mari pour déclarer, en parallèle, que la France était "ravie de l'élection de Barack Obama". C'est original, ça, comme déclaration ; ça valait la peine de l'ouvrir, même sans chanter. Rassurez-vous, Carla la consensuelle a également eu un mot pour George W. Bush, précisant que son époux et lui "s'entendent bien". Merci, Carlita ; ce sera tout pour aujourd'hui.

Si Obama n'aurait pas daigné rencontré le président français (le courant semblait pourtant bien passé lors de sa visite à Paris en juillet dernier), gageons qu'il n'aura pas loupé le passage de sa chanteuse d'épouse Carla Bruni sur les principales chaînes de télé américaines ! Il fallait demander à Carla de composer un hymne pour la victoire du candidat démocrate : il n'aurait pu refuser de recevoir le couple présidentiel sans risquer un grave incident diplomatique…

 

En effet, il comptait fermement sur ce

CIRCUIT DESCRIPTION
The GX4314 is a wideband video multiplexer implemented in bipolar technology. This device is characterized by excellent differential phase and gain in the enabled state, very high off-isolation in the disabled state and fully buffered unilateral signal path. Make-before-break switching assures virtually glitch-free switching.
For use in NxM routing matrices, the GX4314 features a very high, nearly constant input impedance coupled with high output impedance in the disabled state. This allows multiple devices to be paralleled at the inputs and outputs without additional circuitry.
Logic inputs are TTL and 5V CMOS compatible, providing address and chip select functions. The operation of the devices is described in the Truth Table below. The wideband GX4314 is pin for pin compatible with the high performance GX414, extending the flat frequency response characteristics from 50 to 100 MHz.

FEATURES
*low differential phase and gain
*wide bandwidth, 100 MHz at -1 dB (Flattened)
*small switching transient
*±4.5 to ± 11 volts supplies

APPLICATIONS
*HDTV
*Very high quality video switching
*Very high density video switching
*Computer graphics
*PCM / data routing

GX4314-CDB, GX4314-CKB  

GX4314 - Wideband, Monolithic 4x1 Video Multiplexer

Description
The GM1431 is a three terminal adjustable shunt regulator with thermal stability guaranteed over temperature. Output voltage can be adjusted to any value between 2.5V (Vref) and 36V by using two external resistors. The GM1431 has a typical dynamic output impedance of 0.2W. Active output circuitry provides a very unique turn on characteristic, making the GM1431 an excellent tum on replacement for zener diodes in many applications such as onboard regulation and adjustable power supplies. The GM1431 is an ideal voltage reference for 3.0 to 3.3V switching power supplies.
The GM1431 shunt regulator is available with 3 voltage tolerances, 0.5%, 1.0% and 2.0% over TA= 0°C to + 70°C, and four package options (SOT-23, TO-92, SOT-89 and SOP-8). Whatever your application is, the GM1431 offers the optimum combination of performance, reliability, and economy.

Features
*Sink Current Capability 1 mA to 100mA
*Low dynamic output impedance, 0.2W typ.
*0.5%, 1% or 2% reference voltage tolerance
*Alternate for TL431, TL431, LM431 & AS431
*Temperature range 0°C to+ 70 °C
*Available in SOT-23, TO-92, SOT-89 and SOP- 8 packages

Application
*Switching power supplies
*Linear regulators
*Adjustable supplies
*Battery-operated computers
*Computer disk drives
*Instrumentation

GM1431AST23R, GM1431BST23R, GM1431CST23R, GM1431AS8T, GM1431AS8R, GM1431BS8T, GM1431BS8R, GM1431CS8T, GM1431CS8R, GM1431AST89R, GM1431BST89R, GM1431CST89R, GM1431AT92B, GM1431BT92B, GM1431CT92B, GM1431AT92RL, GM1431BT92RL, GM1431CT92RL  

GM1431 - ADJUSTABLE SHUNT REGULATOR

DESCRIPTION
CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three types of core transistors with a different threshold voltage can be mixed according to user application.
The design rules match industry standards, and a wide range of IP macros are available for use. As well as providing a maximum of 91 million gates, approximately twice the level of integration achieved in previous products, the power consumption per gate is also reduced by about half to 2.7 nW. Also, using the highspeed library increases the speed by a factor of approximately 1.3, with a gate delay time of 12 ps.

FEATURES
*Technology :
- 90 nm Si gate CMOS
- 6- to 10-metal layers.
- Low-K (low permittivity) material is used for all dielectric inter-layers.
- Three different types of core transistors (low leak, standard, and high speed) can be used on the same chip.
- The design rules comply with industry standard processes.
*Power supply voltage : + 0.9 V to + 1.3 V (A wide range is supported.)
*Operation junction temperature : − 40 °C to + 125 °C (standard)
*Gate delay time : tpd = 12 ps (1.2 V, Inverter, F/O = 1)
*Gate power consumption : 2.7 nW/gate (1.2 V, 2 NAND, F/O = 1, operating rate 0.5) , 1.8 nW/gate (1.0 V, 2 NAND, F/O = 1, operating rate 0.5)
*High level of integration : Up to 91 million gates
*Reduced chip sized realized by I/O with pad.
*Two types of library sets are supported. (Performance focused (1.2 V) , Low power consumption supported (0.9 V to 1.3 V) )
*Low power consumption design (multi-power supply design and power gating) is supported.
*Compliance with industry standard design rules enables non-Fujitsu Microelectronics commercial macros to be easily incorporated.
*Compiled cell (RAM, ROM, others)
*Support for ultra high speed (up to 10 Gbps) interface macros.
*Special interfaces (LVDS, SSTL2, others)
*Supports use of industry standard libraries (.LIB).
*Uses industry standard tools and supports the optimum tools for the application.
*Short-term development using a physical prototyping tool
*One pass design using a physical synthesis tool
*Hierarchical design environment for supporting large-scale circuits
*Support for Signal Integrity, EMI noise reduction
*Support for static timing sign-off
*Optimum package range : FBGA, FC-BGA, PBGA,TEBGA

 

CS101 - CMOS Standard Cell

Description
Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used i n Class AB for PCN - PCS/cel lular radi o and WLL applications.
*Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 950 mA
Pout = 22 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
- Power Gain - 14.5 dB
- Drain Efficiency - 25.5%
- IM3 @ 2.5 MHz Offset - -37 dBc in 1.2288 MHz Bandwidth
- ACPR @ 885 kHz Offset - -51 dBc in 30 kHz Bandwidth
*Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

Features
*Characterized with Series Equivalent Large-Signal Impedance Parameters
*Internally Matched for Ease of Use
*Qualified Up to a Maximum of 32 VDD Operation
*Integrated ESD Protection
*N Suffix Indicates Lead-Free Terminations
*Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
*200°C Capable Plastic Package
*RoHS Compliant
*In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6S19100NBR1, MRF6S19100N  

MRF6S19100NR1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs