Description
Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used i n Class AB for PCN - PCS/cel lular radi o and WLL applications.
*Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 950 mA
Pout = 22 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
- Power Gain - 14.5 dB
- Drain Efficiency - 25.5%
- IM3 @ 2.5 MHz Offset - -37 dBc in 1.2288 MHz Bandwidth
- ACPR @ 885 kHz Offset - -51 dBc in 30 kHz Bandwidth
*Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

Features
*Characterized with Series Equivalent Large-Signal Impedance Parameters
*Internally Matched for Ease of Use
*Qualified Up to a Maximum of 32 VDD Operation
*Integrated ESD Protection
*N Suffix Indicates Lead-Free Terminations
*Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
*200°C Capable Plastic Package
*RoHS Compliant
*In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6S19100NBR1, MRF6S19100N  

MRF6S19100NR1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Description
The H11AG1M device consists of a Gallium-Aluminum- Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications.

Features
*High efficiency low degradation liquid epitaxial IRED
*Logic level compatible, input and output currents, with CMOS and LS/TTL
*High DC current transfer ratio at low input currents (as low as 200μA)
*Underwriters Laboratory (UL) recognized File #E90700, Volume 2
*IEC 60747-5-2 approved (ordering option V)
 
Applications
*CMOS driven solid state reliability
*Telephone ring detector
*Digital logic isolation


H11AG1M, H11AG1SM, H11AG1SR2M, H11AG1TM, H11AG1VM, H11AG1TVM, H11AG1SVM, H11AG1SR2VM
 

H11AG1M - Phototransistor Optocoupler

DESCRIPTION
The SP7682 or SP7682A provides a complete LED backlight and flash solution that is designed to drive 4 low current LEDs for backlighting and a single channel high current output for a LED flash. The SP7682 and SP7682A have serial interfaces that can program the backlight LED current in steps of 0.5mA up to 31.5mA and flash LED current in steps of 10mA up to 500mA. The SP7682A uses two single line serial interfaces for programming the backlight current and flash current. The SP7682 uses an I2C serial interface which also allows programming active, standby and shutdown states, selecting flash timeout periods and switching individual LEDs for the backlight. The data is loaded into internal registers upon power up and stored while in shutdown. When the chip is enabled, the stored values set the LED currents. The SP7682/SP7682A automatically detects 1x, 1.5x or 2x operation for optimal efficiency.

FEATURES
*Output current up to 500mA for Flash LED
*Up to 94% efficiency in 1x mode
*Triple mode 1x, 1.5x and 2x charge pump
*Built-in current setting DAC
*SP7682 - I2C serial interface
*SP7682A – Single Line Programmable Serial Interface
*2.4MHz switching frequency
*Flash LED output current adjustable in 10mA steps to 500mA
*Backlight LED output current adjustable in 0.5mA steps to 31.5mA
*Power-saving shutdown mode of 1μA
*Time Out function to protect the LED in Flash mode (2s)
*Thermal shutdown protection
*Built-in over-voltage and over-current protection
*Automatic soft start limits in-rush current
*Lead Free, RoHS Compliant Packaging: Space saving 16-pin 3X3mm QFN package

SP7682A, SP7682ER1-L, SP7682ER1-L/TR, SP7682EB, SP7682AER1-L, SP7682AER1-L/TR, SP7682AEB  

SP7682 - Backlight and Flash Driver in QFN 3mm x 3mm