Article List :  Alpha Industries : 8 posted

CDC7630-000 - Silicon Schottky Diode Chips

Alpha Industries 2008/12/27 09:46

Description
Alpha’s product line of silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than 40 GHz. Alpha’s “Universal Chip” design features a 4 mil diameter bond pad that is offset from the semiconductor junction preventing damage to the active junction as a result of wire bonding.
As power-sensing detectors, these Schottky diode chips all have the same voltage sensitivity so long as the output video impedance is much higher than the video resistance of the diode. Figure 1 shows the expected detected voltage sensitivity as a function of RF source impedance in an untuned circuit. Note that sensitivity is substantially increased by transforming the source
impedance from 50 Ω to higher values. Maximum sensitivity occurs when the source impedance equals the video resistance.
In a detector circuit operating at zero bias, depending on the video load impedance, a ZBD device with RV less than 10 kΩ may be more sensitive than a low barrier diode with RV greater than 100 kΩ. Applying forward bias reduces the diode video resistance as shown in Figure 2. Lower video resistance also increases the video bandwidth but does not increase voltage sensitivity, as shown in Figure 3. Biased Schottky diodes have better temperature stability and also may be used in temperature compensated detector circuits.
P-type Schottky diodes generate lower 1/F noise and are preferred for Doppler mixers and biased detector applications. The bond pad for the P-type Schottky diode is the cathode. N-type Schottky diodes have lower parasitic resistance, RS, and will perform with lower conversion loss in mixer circuits. The bond pad for the N-type Schottky diode is the anode.

Features
*For Detector and Mixer Applications
*Low Capacitance for Usage Beyond 40 GHz
*ZBD and Low Barrier Designs
*P-Type and N-Type Junctions
*Large Bond Pad Chip Design

CDC7631-000, CDB7619-000, CDB7620-000, CDF7621-000, CDF7623-000  

CDC7630-000 - Silicon Schottky Diode Chips

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AD310-25 - GaAs IC Bit Digital Attenuator 1 dB LBS DC-2 GHz

Alpha Industries 2008/10/24 09:30

Description
The AD310-25 is an IC FET digital attenuator consisting of four monolithic attenuators consisting of four monolithic attenuators with LSB of 1 dB and a total attenuation of 15dB with all attenuators connected.
This unit is a pin for pin replacement for the AT002D8-25 with improved RF performance extended to 2GHz.
The AD310-25 is particularly suited where high attenuation accuracy, low insertion loss and low intermodulation products are required. Typical applications include cellular radio, wireless data, wireless local loop and other gain level control circuits.

Features
*Attenuation in 1 dB steps to 15 dB with High Accuracy
*Designed for Cellular Radio Applications
*Low Cost SOIC-16 Plastic Package
*Low DC Power Consumption

 

AD310-25 - GaAs IC Bit Digital Attenuator 1 dB LBS DC-2 GHz

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AO3400A - N-Channel Enhancement Mode Field Effect Transistor

Alpha Industries 2008/09/29 10:03

General Description
The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).

Features
*VDS (V) = 30V
*ID = 5.7A (VGS = 10V)
*RDS(ON) < 26.5mΩ (VGS = 10V)
*RDS(ON) < 32mΩ (VGS = 4.5V)
*RDS(ON) < 48mΩ (VGS = 2.5V)

 

AO3400A - N-Channel Enhancement Mode Field Effect Transistor

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AV133-315-HIP3™ Variable Attenuator for UMTS Base Stations

Alpha Industries 2008/08/22 10:25

Description
The AV133-315 is a voltage controlled variable attenuator from Alpha’s series of HIP3™ components.
It is specifically designed and specified for use as a wide dynamic range low distortion attenuator for UMTS base station applications centered at 2140 MHz.
The AV133- 315 employs a monolithic quadrature hybrid and a pair of silicon PIN diodes to achieve the specified low distortion performance.
It operates from 0–12 V at 1.6 mA typical control current at maximum attenuation.
The AV133-315 is packaged in a small outline LGA (Land Grid Array) surface mount package with the internal elements affixed to an organic BT substrate.

Features
*23 dB Attenuation Range
*1.5 dB Insertion Loss, 1.5 SWR
*0–12 V Control Voltage
*43 dBm IP3
*Small Footprint LGA Package
*Designed for UMTS Base StationsFeatures

 

AV133-315-HIP3™ Variable Attenuator for UMTS Base Stations

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AK002D4-24 - GaAs IC 4 Bit Digital Attenuator With Driver 1 dB LSB DC-2 GHz

Alpha Industries 2008/08/01 14:12

Description
The AK002D4-24 is an IC FET digital attenuator consisting of four monolithic attenuators with
an LSB of 1 dB and a total attenuation of 15 dB with all attenuators connected.
The device has integral drivers for each bit requiring less than 4 mA per bit.
DC supply voltages of ±5 V are required.
The attenuator is packaged in a 14 lead plastic SOIC.

Features
* Attenuation in 1 dB Steps to 15 dB
* Integral Driver ±5 V Supply Voltages
* Low Cost SOIC-14 Plastic Package  

AK002D4-24 - GaAs IC 4 Bit Digital Attenuator With Driver 1 dB LSB DC-2 GHz

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