EM44AM1684LBA - 256Mb (4M×4Bank×16) Double DATA RATE 2 SDRAM
Eorex 2009/01/06 10:03
Description
The EM44AM1684LBA is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 268,435,456 bits which organized as 4Mbits x 4 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 667 Mb/sec/pin (DDR2-667) for general applications.
The chip is designed to comply with the following key DDR2 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) Off-Chip Driver (OCD) impedance adjustment and On Die Termination (4) normal and weak strength data output driver.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
The 512Mb DDR2 device operates with a single power supply: 1.8V ± 0.1V VDD and VDDQ.
Available package: TFBGA-84Ball (12.5mmx10mm, 0.8mm x 0.8mm ball pitch).
Features
*JEDEC Standard VDD/VDDQ=1.8V ± 0.1V.
*All inputs and outputs are compatible with SSTL_18 interface.
*Fully differential clock inputs (CK,/CK) operation.
*4 Banks
*Posted CAS
*Burst Length: 4 and 8.
*Programmable CAS Latency (CL): 3, 4 and 5.
*Programmable Additive Latency (AL): 0, 1, 2, 3 and 4.
*Write Latency (WL) =Read Latency (RL) -1.
*Read Latency (RL) = Programmable Additive Latency (AL) + CAS Latency (CL)
*Bi-directional Differential Data Strobe (DQS).
*Data inputs on DQS centers when write.
*Data outputs on DQS, /DQS edges when read.
*On chip DLL align DQ, DQS and /DQS transition with CK transition.
*DM mask write data-in at the both rising and falling edges of the data strobe.
*Sequential & Interleaved Burst type available.
*Off-Chip Driver (OCD) Impedance Adjustment
*On Die Termination (ODT)
*Auto Refresh and Self Refresh
*8,192 Refresh Cycles / 64ms
*Average Refresh Period 7.8us at lower than Tcase 85°C, 3.9us at 85°C < Tcase ≦ 95°C
*RoHS Compliance
*Partial Array Self-Refresh (PASR)
*High Temperature Self-Refresh rate enable
EM44AM1684LBA-5F, EM44AM1684LBA-37F, EM44AM1684LBA-3F
The EM44AM1684LBA is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 268,435,456 bits which organized as 4Mbits x 4 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 667 Mb/sec/pin (DDR2-667) for general applications.
The chip is designed to comply with the following key DDR2 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) Off-Chip Driver (OCD) impedance adjustment and On Die Termination (4) normal and weak strength data output driver.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
The 512Mb DDR2 device operates with a single power supply: 1.8V ± 0.1V VDD and VDDQ.
Available package: TFBGA-84Ball (12.5mmx10mm, 0.8mm x 0.8mm ball pitch).
Features
*JEDEC Standard VDD/VDDQ=1.8V ± 0.1V.
*All inputs and outputs are compatible with SSTL_18 interface.
*Fully differential clock inputs (CK,/CK) operation.
*4 Banks
*Posted CAS
*Burst Length: 4 and 8.
*Programmable CAS Latency (CL): 3, 4 and 5.
*Programmable Additive Latency (AL): 0, 1, 2, 3 and 4.
*Write Latency (WL) =Read Latency (RL) -1.
*Read Latency (RL) = Programmable Additive Latency (AL) + CAS Latency (CL)
*Bi-directional Differential Data Strobe (DQS).
*Data inputs on DQS centers when write.
*Data outputs on DQS, /DQS edges when read.
*On chip DLL align DQ, DQS and /DQS transition with CK transition.
*DM mask write data-in at the both rising and falling edges of the data strobe.
*Sequential & Interleaved Burst type available.
*Off-Chip Driver (OCD) Impedance Adjustment
*On Die Termination (ODT)
*Auto Refresh and Self Refresh
*8,192 Refresh Cycles / 64ms
*Average Refresh Period 7.8us at lower than Tcase 85°C, 3.9us at 85°C < Tcase ≦ 95°C
*RoHS Compliance
*Partial Array Self-Refresh (PASR)
*High Temperature Self-Refresh rate enable
EM44AM1684LBA-5F, EM44AM1684LBA-37F, EM44AM1684LBA-3F
EM44AM1684LBA - 256Mb (4M×4Bank×16) Double DATA RATE 2 SDRAM
