General Description
The XP1035-BD is a linear power amplifier that operates over the 5.9-9.5GHz frequency band. The device provides 26 dB gain and 39 dBm Output Third Order Intercept Point (OIP3) across the band and is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the part. The
device is manufactured in 0.5um GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1035-BD is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
*26 dB Small Signal Gain
*39 dBm Third Order Intercept Point (OIP3)
*Integrated Power Detector
*100% On-Wafer RF Testing  

XP1035-BD - 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier

General Description
Mimix Broadband’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0dB with a +24.0 dBm saturated output power.
The device also includes Lange couplers to achieve good output return loss.
This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
* Excellent Saturated Output Stage
* Balanced Design Provides Good Output Match
* 26.0 dB Small Signal Gain
* +24.0 dBm Saturated Output Power
* 100% On-Wafer RF, DC and Output Power Testing
* 100% Visual Inspection to MIL-STD-883 Method 2010

XP1005-BD-000V
XP1005-BD-EV1  

P1005-BD - 35.0-43.0 GHz GaAs MMIC Power Amplifier

General Description
 Mimix Broadband’s 32.0-42.0 GHz GaAs MMIC sub-harmonic image reject mixer can be used as an upor down-converter.
The device has a conversion loss of 9.0 dB with 18.0 dB image rejection across the band.
I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband.
This MMIC uses Mimix Broadband’s 2 μm GaAs HBT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
* Sub-harmonic Image Reject Mixer
* GaAs HBT Technology
* 9.0 dB Conversion Loss
* 18.0 dB Image Rejection
* 100% On-Wafer RF Testing
* 100% Visual Inspection to MIL-STD-883
* Method 2010

XM1003-BD-000V
XM1003-BD-EV1  

XM1003-BD - 32.0-42.0 GHz GaAs MMIC Image Reject Mixer

Features
* Matched Pair of Transistors for Optimum Balanced Amplifier Design
* AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor (pHEMT)
* High Gain:
   25 dB @ 900 MHz
   21 dB @ 1900 MHz
* Low Noise Figure:
   0.6 dB @ 900 MHz
   0.7 dB @ 1900 MHz
* 17 dBm P1dB at 2 GHz
* 33 dBm OIP3 at 2 GHz
* 600μm Gate Width: 50 Output Impedance
* Excellent Uniformity
* Ultra Compact Surface-Mount QFN Package
* 10 Year MTBF Lifetime
* RoHS-Compliant Construction

Applications
* Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges
* Cellular/PCS/GSM/W-CDMA
* Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers
* WiMAX WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications
* General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications

Description
The CDQ0303-QS is a dual, ultra low-noise amplifier combining high gain, state-of-the-art noise figure and high IP3. Utilizing Mimix's distinctive in-house GaAs fabrication advantage and matched pair technology, co-located matched transistor die are assembled in the 4mm x 4mm
QFN package. The low-cost, surface-mount, 16 terminal, plastic package is also lead-free.
Packaging a matched pair of ultra low-noise devices in a single package makes the CDQ0303-QS an ideal product for balanced amplifier implementation. It is intended for many applications operating in the 900 MHz to 2400 MHz  

CDQ0303-QS - 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier

Features
* Integrated Gain, Doubler and Driver Stages
* Single Positive Supply, +5V
* Integrated Bypassing Capacitor
* +20.0 dBm Output Saturated Power
* 35.0 dBc Fundamental Suppression
* On-Chip ESD Protection
* 100% RF, DC and Output Power Testing
* 3x3 QFN Package
* RoHS Compliant

General Description
Mimix Broadband’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC doubler integrates a gain stage, passive doubler and driver amplifier onto a single device.
The XX1007-QT has a self-biased architecture requiring a single positive supply (+5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external
components.
This device uses Mimix Broadband’s 0.15um GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
XX1007-QT has integrated ESD structures for protection and comes in a low cost 3x3mm QFN package.
The device is well suited for Millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

XX1007-QT-0G00
XX1007-QT-0G0T
XX1007-QT-EV1  

XX1007-QT - 13.5-17.0/27.0-34.0 GHz Doubler QFN, 3X3mm