FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.
c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series.
• 3φ 100A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under voltage (P-Fo available from upper arm devices)
• Acoustic noise-less 11kW class inverter application

PM100CLA060
TAG Base, FLAT, Package

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Description
The M5218 are semiconductor integrated circuits designed for a low noise preamplifier in audio equipment and a general-purpose operational amplifier in other electronic equipment. Two low noise operational amplifier circuits displaying internal phase-compensated high gain and low distortion are contained in an 8-pin SIP, DIP or FP for application over a wide rage as a general-purpose dual amplifier in general electronic equipment.
The devices have virtually the same characteristics as the 4557, 4558, 4559 and 741 operational amplifiers.
The units can also be used as a single power supply type and amplifier in portavle equipment. It is also suitable as a headphone amplifier because of its high load current.

Features
- High gain, low distortion
- High slew rate
- Low noise FLAT
- Operation with low supply voltage
- High load current, high power disspation

Application
General-purpose amplifier uin stereo equipment, tape decks, and radio stereo cassette recorders; active filters, servo amplifiers, oprational circuits in other general electronic equipment.

M5218AL/P/FP
TAG Amplifier

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