DESCRIPTION
The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability.

FEATURES
*High Output Power : Po (1 dB) = +34.0 dBm typ.
*High Linear Gain : 8.5 dB typ. (NEZ1011-3E), 7.5 dB typ. (NEZ1414-3E)
*High Efficiency : 30 % typ.
*Input and Output Internally Matched for Optimum performance

NEZ1414-3E  

NEZ1011-3E - 3W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION
 The UPC842GR-9LG, UPC4742GR-9LG are a high speed version of the operational amplifier UPC1251GR-9LG, UPC1251MP-KAA, UPC358GR-9LG for general single power supply use with high speed pulse response and high stabilization.
A high speed PNP transistor is used in the circuit which improves the characteristics such as a slew rate, gain-bandwidth product, stabilization of the withstand load capacitance, with no crossover distortion compared to UPC1251GR-9LG, UPC 1251MP-KAA, UPC358GR-9LG.
Therefore, UPC842GR-9LG, UPC4742GR-9LG can be used in a wide range of application circuits for single power supply AC amplifier, active filters, line driver and an amplifier for light receiving element etc.
The UPC842GR-9LG which expands temperature type is suited for wide operating ambient temperature use, and UPC4742GR-9LG is used for general purposes.
UPC844GR-9LG, UPC4744GR-9LG which are quad types with the same circuit configuration are also available as series of operational amplifiers.

FEATURES
• Slew Rate (AV = +1) 7 V/μs (TYP.)
• Stability to capacitive loads (load capacity, 1000 pF) (V+ = +5 V, V− = GND)
• Internal frequency compensation
• Gain Band Width Product 3.5 MHz (TYP.)
• Output short-circuit protection
• Input Offset Voltage ±2 mV (TYP.)
• A pin connection (pin compatible) of a standard dual operational
• Input Offset Current ±6 nA (TYP.) amplifier.
• Wide operating ambient temperature range
UPC842GR-9LG: TA = −40 to +125°C, UPC4742GR-9LG: TA = −40 to +85°C

UPC842GR-9LG-E1-A
UPC842GR-9LG-E2-A
UPC4742GR-9LG-E1-A
UPC4742GR-9LG-E2-A

 

UPC842GR-9LG - BIPOLAR ANALOG INTEGRATED CIRCUIT

The UPD3753 is a 2088-bit high sensitivity CCD (Charge Coupled Device) linear image sensor which changes optical images to electrical signal.
The UPD3753 consists of 2088-bit photocell array and a line of 2088-bit CCD charge transferred register.
It contains a reset a feed-through level clamp circuit, a pulse generator, and a voltage amplifier to provide high sensitivity and low noise. It also supports low power consumption with single 5 V power supply. The UPD3753 can be driven by power supply and three input clocks owing to the built-in reset pulse generator and a clamp pulse generator.

FEATURES
• Valid photocell : 2088-bit
• Photocell's pitch : 14 mm
• High response sensitivity : Providing a response equal with the existing equivalent NEC product (mPD3743) to the light from a daylight fluorescent lamp
• Low noise : Providing about two thirds register imbalance of the existing equivalent NEC product (mPD3743)
• Peak response wavelength : 550 nm (green)
• Resolution : 8 dot/mm across the shorter side of a B4-size (257 ´ 364 mm) sheet
• Power supply : +5 V
• Drive clock level : CMOS output under +5 V operation
• Scanning speed : 1.0 ms/line
• Built-in circuit : Reset feed-through level clamp circuit, reset pulse generator, clamp pulse generator

 

UPD3753 - 2088-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT

DESCRIPTION
μ PD121A10 is the CMOS regulator which can output 2.0 A current. This regulator is suitable for power supply for 1.0V ASIC core, for example our companies’ CB-90 (90 nm process LSI) etc. The dropout voltage is made small (0.7 V MAX. (IO = 1.0 A) by dividing bias voltage (VDD) from input voltage (VIN). Therefore this product can output under the conditions, VIN ≥ 1.62 V (VDD ≥ 4.0 V). Output voltage can be adjustable between 0.95 and 1.15 V.

FEATURES
• Output Current: 2.0 A
• Output Voltage: 0.95 to 1.15 V
• Bias Voltage: 4.0 to 5.5 V
• Reference Voltage Tolerance: VREF ± 10 mV (TJ = 25°C)
• Low Dropout Voltage: VDIF = 0.7 V MAX. (IO = 1.0 A)
• On-chip over-current protection circuit
• On-chip thermal shut down circuit

APPLICATIONS
This regulator is suitable for low power supply voltage IC, for example core of CB-90 (90 nm process LSI) etc.


UPD121A10T1F-E1-AT
UPD121A10T1F-E2-AT  

UPD121A10 - 2-POWER SUPPLY INPUT METHOD 1.0 V/2.0 A REGULATOR

FEATURES

• LOW COST MINIATURE PLASTIC PACKAGE (SOT-343)
• LOW NOISE FIGURE: 0.55 dB typical at 2 GHz
• HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz
• LG = 0.6 μm, WG = 800 μm
• TAPE & REEL PACKAGING



DESCRIPTION 

The NE38018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for
improved RF and DC performance, reliability, and uniformity.
Its low noise figure, high gain, small size and weight make it an ideal low noise medium power amplifier transistor in the 1-3 GHz frequency range. The NE38018 is suitable for GPS, PCS, WLAN, MMDS, and other commercial applications.
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.



NE38018
NE38018-TI-67
NE38018-TI-68  

NE38018 - GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER