DESCRIPTION
The SPC1016 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
*N-Channel
- 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
- 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
*P-Channel
- 20V/0.45A,RDS(ON)=0.52Ω@VGS=-4.5V
- 20V/0.35A,RDS(ON)=0.70Ω@VGS=-2.5V
- 20V/0.25A,RDS(ON)=0.95Ω@VGS=-1.8V
*Super high density cell design for extremely low RDS (ON)
*exceptional on-resistance and maximum DC current capability
*SOT-563 (SC-89-6L) package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPC1016S56RG  

SPC1016 - N & P Pair Enhancement Mode MOSFET

DESCRIPTION
The SP432 is low-voltage three-terminal adjustable voltage references, with specified thermal stability over applicable industrial and commercial temperature ranges.
Output voltage can be set to any value between VREF (1.24V) and 20V with two external resistors.
These devices have a typical output impedance of 0.25Ω. Active output circuitry provides a very sharp turn-on characteristic, making the SP432 excellent replacements for low-voltage Zener diodes in many applications, including onboard regulation and adjustable power supplies.

FEATURES
*Low-Voltage Operation --- Down to 1.24 V
*Adjustable Output Voltage, VO = Vref to 20 V
*Low Operational Cathode Current --- 80uA ( Typ)
*0.25Ω Typical Output Impedance

APPLICATIONS
*Battery Power Equipment
*Linear Regulators
*Switch Power Supply
*Cellular Phone
*Digital Cameras
*Computer Disk Drivers
*Instrumentation

SP432AS23RG
SP432BS23RG

 

SP432-Low Voltage Adjustable Precision Shunt Regulators

DESCRIPTION
The SPE0512 are designed by TVS device that is to protect sensitive electronics from damage or latch-up due to ESD.
They are designed for use in applications where board space is at a premium.
SPE0512 will protect up to two lines, and may be used on lines where the signal polarities swing above and below ground.
SPE0512 offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage, and no device degradation.
SPE0512 may be used to meet the immunity requirements of IEC 61000-4-2, level 4.
The small SOT-523 package makes them ideal for use in portable electronics such as cell phones, PDA’s, notebook computers, and digital cameras.

FEATURES
* Transient protection for data lines to
- IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- IEC 61000-4-4 (EFT) 40A (5/50ns)
* Protects two I/O lines
* Working voltage: 5V
* Low leakage current
* Low operating and clamping voltages

APPLICATIONS
* Cellular Handsets and Accessories
* Cordless Phone
* PDA
* Notebooks and Handhelds
* Portable Instrumentation
* Digital Cameras
* MP3 Player

SPE0512S52RG  

SPE0512 - 2-Line ESD Protection Array

DESCRIPTION
 The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
* 20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V
* 20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V
* 20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23-3L package design

APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter

SPN2302AS23RG

 

SPN2302A - N-Channel Enhancement Mode MOSFET

DESCRIPTION
The fundamental of SP6003A synchronous rectifier (SR) driver IC is based on our U.S. patented methods that utilize the principle of “prediction” logic circuit. The IC deliberates previous cycle timing to control the SR in present cycle by “predictive” algorithm that makes adjustments to the turn-off time, in order to achieve maximum efficiency and avoid cross-conduction at the same time. It also maintains the MOSFET’s body diode conduction at minimum level. The SP6003A is capable to adapt in almost all existing flyback converters with few adjustments considered necessary.

FEATURES
• Offers efficiency improvement over Schottky Diode (depends on drive configuration of the
SR).
• Drives all logic level Power MOSFET.
• Prediction gate timing control.
• Minimum MOSFET body diode conduction.
• Operating frequency up to 650 KHz.
• Synchronize to transformer secondary voltage waveform.

APPLICATIONS
• Servers & workstations
• Storage area network power supplies
• Telecommunication converters
• Embedded systems
• Industrial & commercial systems using high current processors

SP6003AS8RG
SP6003AS8TG  

SP6003A - Synchronous Rectifier Driver