Description
Packaged in the SOT89 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.

Features
*7.5A continuous current
*Up to 20A peak current
*Very low saturation voltage
*70V forward blocking voltage
*4.5V reverse blocking voltage

Applications
*Emergency lighting circuits
*Motor driving
*Camera strobe
*Boost converter
*CCFL backlight inverters
*MOSFET gate drivers
*LED Driving

ZXTN19020DZTA  

ZXTN19020DZ - 20V NPN high gain transistor in SOT89

Description
This design note shows the ZXSC400 driving a single 3W LED. The input voltage ranges from 1.8V to 3.6V with constant output current of 700mA down to 2.6V with an overall 80% of efficiency.
Figure 1 shows typical constant current solution with ZXSC400 driving one 3W LED. The input
voltage range allows the use of two alkaline batteries or one Lithium Ion cell (CR123A) for
portable flashlight applications.
Q1 and Q2 forms a pseudo Darlington pair which provide enough current gain for a switching
current up to 1.5A. In order to provide better switch off performance, a Schottky diode, D2, is used to drain the base current from the base of Q1 directly. In order to achieve higher efficiency, current monitor U2 is used to provide a low voltage drop LED current sensing through the low ohmic resistor, R2. The LED current is converted to 300mV feedback voltage through R3.  

DN84 - ZXSC400 Driving 3W high power LEDs

Device Description
A range of silicon varactor diodes for use in frequency control and filtering.
Featuring closely controlled CV characteristics and high Q.
Low reverse current ensures very low phase noise performance.
Available in single or dual common cathode format in a wide rage of miniature surface mount packages.

Features
* Close tolerance C-V characteristics
* Octave tuning from 0 to 6V
* Low IR (typically 200pA)
* Excellent phase noise performance
* High Q

Applications
* VCXO and TCXO
* Wireless communications
* Pagers
* Mobile radio

ZMV930
ZC930TA
ZC931TA

 

ZC930 - SILICON 12V HYPERABRUPT VARACTOR DIODES

Description
Advanced process capability has been used to achieve this high performance device. Combining two NPN transistors in the SM-8 package provides a compact solution for the intended applications.

Features
* Dual NPN device
* Very low saturation voltage
* High gain
* SM 8 package

Applications
* CCFL invertors
* Royer circuits

ZDT1048TA  

ZDT1048 - SM-8 Dual NPN medium power high gain transistors

DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.
This makes it ideal for high efficiency, low voltage switching applications.

FEATURES
* Extremely Low Equivalent On Resistance
* Extremely Low Saturation Voltage
* hFE characterised up to 5A
* IC=2A Continuous Collector Current
* MSOP8 package

APPLICATIONS
* DC - DC Converters
* Power Management Functions
* Power switches
* Motor control

ZXT12P40DXTA
ZXT12P40DXTC  

ZXT12P40DX - DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR