AO3400A - N-Channel Enhancement Mode Field Effect Transistor
Alpha Industries 2008/09/29 10:03
General Description
The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).
Features
*VDS (V) = 30V
*ID = 5.7A (VGS = 10V)
*RDS(ON) < 26.5mΩ (VGS = 10V)
*RDS(ON) < 32mΩ (VGS = 4.5V)
*RDS(ON) < 48mΩ (VGS = 2.5V)
The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).
Features
*VDS (V) = 30V
*ID = 5.7A (VGS = 10V)
*RDS(ON) < 26.5mΩ (VGS = 10V)
*RDS(ON) < 32mΩ (VGS = 4.5V)
*RDS(ON) < 48mΩ (VGS = 2.5V)
AO3400A - N-Channel Enhancement Mode Field Effect Transistor
TAG N-Channel,
Transistor
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