AT29LV1024 - 1-Megabit(64K x 16) 3-volt Only Flash Memory
Atmel 2008/09/20 09:15
Description
The AT29LV1024 is a 3-volt only in-system Flash programmable and erasable rea donly memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 50 mA. The device endurance issuch that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29LV1024 does not require high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading f rom an EPROM. Reprogramming the AT29LV1024 is performed on a sector basis; 128 words of data are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 words of data are internally latched, freeing the address and data bus for other operations. Following the initiation of
a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7 or I/O15. Once the end of a program cycle has been detected, a new access for a read or program can begin.
Features
*Single Voltage, Range 3V to 3.6V Supply
*3-Volt Only Read and Write Operation
*Software Protected Programming
*Fast Read Access Time - 150 ns
*Low Power Dissipation
– 15 mA Active Current
– 50 μA CMOS Standby Current
*Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 512 Sectors (128 words/sector)
– Internal Address and Data Latches for 128 Words
*Fast Sector Program Cycle Time - 20 ms
*Internal Program Control and Timer
*DATA Polling for End of Program Detection
*Typical Endurance > 10,000 Cycles
*CMOS and TTL Compatible Inputs and Outputs
*Commercial and Industrial Temperature Ranges
AT29LV1024-15JC, AT29LV1024-15TC, AT29LV1024-15JI, AT29LV1024-15TI, AT29LV1024-20JC, AT29LV1024-20TC, AT29LV1024-20JI, AT29LV1024-20TI, AT29LV1024-25JC, AT29LV1024-25TC, AT29LV1024-25JI, AT29LV1024-25TI
The AT29LV1024 is a 3-volt only in-system Flash programmable and erasable rea donly memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 50 mA. The device endurance issuch that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29LV1024 does not require high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading f rom an EPROM. Reprogramming the AT29LV1024 is performed on a sector basis; 128 words of data are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 words of data are internally latched, freeing the address and data bus for other operations. Following the initiation of
a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7 or I/O15. Once the end of a program cycle has been detected, a new access for a read or program can begin.
Features
*Single Voltage, Range 3V to 3.6V Supply
*3-Volt Only Read and Write Operation
*Software Protected Programming
*Fast Read Access Time - 150 ns
*Low Power Dissipation
– 15 mA Active Current
– 50 μA CMOS Standby Current
*Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 512 Sectors (128 words/sector)
– Internal Address and Data Latches for 128 Words
*Fast Sector Program Cycle Time - 20 ms
*Internal Program Control and Timer
*DATA Polling for End of Program Detection
*Typical Endurance > 10,000 Cycles
*CMOS and TTL Compatible Inputs and Outputs
*Commercial and Industrial Temperature Ranges
AT29LV1024-15JC, AT29LV1024-15TC, AT29LV1024-15JI, AT29LV1024-15TI, AT29LV1024-20JC, AT29LV1024-20TC, AT29LV1024-20JI, AT29LV1024-20TI, AT29LV1024-25JC, AT29LV1024-25TC, AT29LV1024-25JI, AT29LV1024-25TI
AT29LV1024 - 1-Megabit(64K x 16) 3-volt Only Flash Memory
TAG Memory
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