Description
The EBE51UD8AEFA is 64M words × 64 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (μBGA) package. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 4 bits prefetchpipelined architecture. Data strobe (DQS and /DQS)
both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. This module provides high density mounting without utilizing surface mount technology. Decoupling capacitors are mounted beside each FBGA (μBGA) on the module board.

Features
*240-pin socket type dual in line memory module (DIMM)
- PCB height: 30.0mm
- Lead pitch: 1.0mm
- Lead-free
*Power supply: VDD = 1.8V ± 0.1V
*Data rate: 667Mbps (max.)
*SSTL_18 compatible I/O
*Double-data-rate architecture: two data transfers per clock cycle
*Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used capturing data at the receiver
*DQS is edge aligned with data for READs: centeraligned with data for WRITEs
*Differential clock inputs (CK and /CK)
*DLL aligns DQ and DQS transitions with CK transitions
*Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS
*Four internal banks for concurrent operation (components)
*Data mask (DM) for write data
*Burst lengths: 4, 8
*/CAS Latency (CL): 3, 4, 5
*Auto precharge operation for each burst access
*Auto refresh and self refresh modes
*Average refresh period
- 7.8μs at 0°C ≤ TC ≤ +85°C
- 3.9μs at +85°C < TC ≤ +95°C
*Posted CAS by programmable additive latency for better command and data bus efficiency
*Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality
*/DQS can be disabled for single-ended Data Strobe operation

EBE51UD8AEFA-6E-E
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