The K4M56163PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

*1.8V power supply.
*LVCMOS compatible with multiplexed address.
*Four banks operation.
*MRS cycle with address key programs.
-CAS latency (1, 2 & 3).
-Burst length (1, 2, 4, 8 & Full page).
-Burst type (Sequential & Interleave).
*EMRS cycle with address key programs.
*All inputs are sampled at the positive going edge of the system clock.
*Burst read single-bit write operation.
*Special Function Support.
-PASR (Partial Array Self Refresh).
-Internal TCSR (Temperature Compensated Self Refresh)
-DS (Driver Strength)
-DPD (Deep Power Down)
*DQM for masking.
*Auto refresh.
*64ms refresh period (8K cycle)
*Commercial Temperature Operation (-25°C ~ 70°C).
*Extended Temperature Operation (-25°C ~ 85°C).
*54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).

K4M56163PG-RE75, K4M56163PG-BE75, K4M56163PG-RG75

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