The KM416S1120D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

*3.3V power supply
*LVTTL compatible with multiplexed address
*Dual banks operation
*MRS cycle with address key programs
-CAS Latency ( 2 & 3)
-Burst Length (1, 2, 4, 8 & full page)
-Burst Type (Sequential & Interleave)
*All inputs are sampled at the positive going edge of the system clock
*Burst Read Single-bit Write operation
*DQM for masking
*Auto & self refresh
*15.6us refresh duty cycle (2K/32ms)

KM416S1120DT-G/FC, KM416S1120DT-G/F6, KM416S1120DT-G/F7

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