The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.

 Final Application
* Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA,
Pout = 100 Watts CW, Full Frequency Band (869-960 MHz)
Power Gain — 33.5 dB
Power Added Efficiency — 54%

GSM EDGE Application
* Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 870 mA, Pout = 50 Watts Avg., Full Frequency Band (869-960 MHz)
Power Gain — 35.5 dB
Power Added Efficiency — 39%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -81 dBc
EVM — 2% rms
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
* Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 0 to 50.8 dBm CW (or
1 mW to 120 W CW) Pout.

Features
- Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
- On-Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
- Integrated ESD Protection
- 200°C Capable Plastic Package
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MWE6IC9100NR1
MWE6IC9100GNR1
MWE6IC9100NBR1

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