Description
Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used i n Class AB for PCN - PCS/cel lular radi o and WLL applications.
*Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 950 mA
Pout = 22 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
- Power Gain - 14.5 dB
- Drain Efficiency - 25.5%
- IM3 @ 2.5 MHz Offset - -37 dBc in 1.2288 MHz Bandwidth
- ACPR @ 885 kHz Offset - -51 dBc in 30 kHz Bandwidth
*Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

Features
*Characterized with Series Equivalent Large-Signal Impedance Parameters
*Internally Matched for Ease of Use
*Qualified Up to a Maximum of 32 VDD Operation
*Integrated ESD Protection
*N Suffix Indicates Lead-Free Terminations
*Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
*200°C Capable Plastic Package
*RoHS Compliant
*In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6S19100NBR1, MRF6S19100N  

MRF6S19100NR1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Description
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.

Features
*Avalanche Energy Specified
*Fast Switching
*Simple Drive Requirements

 

BLV4N60 - N-channel Enhancement Mode Power MOSFET

DESCRIPTION
The SPC1016 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
*N-Channel
- 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
- 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
*P-Channel
- 20V/0.45A,RDS(ON)=0.52Ω@VGS=-4.5V
- 20V/0.35A,RDS(ON)=0.70Ω@VGS=-2.5V
- 20V/0.25A,RDS(ON)=0.95Ω@VGS=-1.8V
*Super high density cell design for extremely low RDS (ON)
*exceptional on-resistance and maximum DC current capability
*SOT-563 (SC-89-6L) package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPC1016S56RG  

SPC1016 - N & P Pair Enhancement Mode MOSFET

Description
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.  

BLV840 - N-channel Enhancement Mode Power MOSFET

General Description
Utilizing Analogic Tech’s state-of-the-art TrenchDMOS process, the AHK6030LX sets a new standard in current handling capability and efficiency for surface mount power MOSFETs.
Gate charge and RDS(ON) have been optimized and package inductance minimized to provide high efficiency for DC-DC.

Features
*VDS(MAX) = 30V
*ID(MAX) (a)= 52 A @ 25°C
*IAPP(MAX) = 20A in typical computer application
*Low Gate Charge
*Low RDS(ON):
10.5 mΩ=(max), 9.5 mΩ=(typ)@VGS = 10V
18 mΩ= (max), 14 mΩ=(typ)@ VGS = 4.5V

Applications
*DC-DC converters for CPU's
*High Current Load Switch


AHK6030LXINY-T1

 

AHK6030LX-30V N-Channel Power MOSFET