Article List :  SYNCHRONOUS : 38 posted

EM488M3244LBA - 256Mb (2M×4Bank×32) Synchronous DRAM

Eorex 2008/09/24 09:28

Description
The EM488M3244LBA is Synchronous Dynamic Random Access Memory (SDRAM) organized as 2Meg words x 4 banks by 32 bits. All inputs and outputs are synchronized with the positive edge of the clock.
The 256Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate at 1.8V low power memory system. It also provides auto refresh with power saving / down mode. All inputs and outputs voltage levels are compatible with LVCMOS.
Available packages: TFBGA-90B(13mmx8mm).

Features
*Fully Synchronous to Positive Clock Edge
*Single 1.8V ±0.1V Power Supply
*LVCMOS Compatible with Multiplexed Address
*Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page
*Programmable CAS Latency (C/L) - 2 or 3
*Data Mask (DQM) for Read / Write Masking
*Programmable Wrap Sequence
– Sequential (B/L = 1/2/4/8/full Page)
– Interleave (B/L = 1/2/4/8)
*Burst Read with Single-bit Write Operation
*All Inputs are Sampled at the Rising Edge of the System Clock
*Auto Refresh and Self Refresh
*4,096 Refresh Cycles / 64ms (15.625us)
*Programmable Driver Strength Control
–1/2, 1/4 of Full Strength

EM481M3244LBA-7FE, EM482M3244LBA-7FE, EM484M3244LBA-7FE, EM488M3244LBA-7FE, EM48AM3244LBA-7FE, EM48BM3244LBA-7FE, EM481M3244LBA-75FE, EM482M3244LBA-75FE, EM484M3244LBA-75FE, EM488M3244LBA-75FE, EM48AM3244LBA-75FE, EM48BM3244LBA-75FE, EM481M3244LBA-8FE, EM482M3244LBA-8FE, EM484M3244LBA-8FE, EM488M3244LBA-8FE, EM48AM3244LBA-8FE, EM48BM3244LBA-8FE

 

EM488M3244LBA - 256Mb (2M×4Bank×32) Synchronous DRAM

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HSD16M64F8K - Synchronous DRAM Module 128Mbyte (16Mx64bit), SMM ,16Mx8, 4Banks, 4K Ref. 3.3V

Hanbit 2008/09/19 09:37

GENERAL DESCRIPTION
The HSD16M64F8K is a 16M x 64 bit Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin TSSOP package on a 120-pin glass-epoxy. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD16M64F8K is a SMM(Stackable Memory Module type) .Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES
*Part Identification HSD16M64F8K : 100MHz (CL=2 & CL=3)
*Burst mode operation
*Auto & self refresh capability (4096 Cycles/64ms)
*LVTTL compatible inputs and outputs
*Single 3.3V ±0.3V power supply
*MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
*All inputs are sampled at the positive going edge of the system clock
*The used device is 4M x 8bit x 4Banks SDRAM

HSD16M64F8K-10L  

HSD16M64F8K - Synchronous DRAM Module 128Mbyte (16Mx64bit), SMM ,16Mx8, 4Banks, 4K Ref. 3.3V

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ADS8608A8A - Synchronous DRAM

A-Data 2008/09/18 09:29

General Description
The ADS8608A8A are four-bank Synchronous DRAMs organized as 8,388,608 words x 8 bits x 4 banks.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications.

Features
*JEDEC standard LVTTL 3.3V power supply
*MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8,& full page)
-Burst Type (sequential & Interleave)
*4 banks operation
*All inputs are sampled at the positive edge of the system clock
*Burst Read single write operation
*Auto & Self refresh
*DQM for masking
*8192 Refresh Cycles
*Package:54-pins 400 mil TSOP-Type II

ADS8608A8A-75, ADS8608A8A-75A  

ADS8608A8A - Synchronous DRAM

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ACT6308-Low Input High Efficiency Synchronous Step-Up DC/DC Converter

Active-Semi 2008/09/17 09:21

GENERAL DESCRIPTION
The ACT6308 is a high efficiency synchronous step-up DC/DC converter that consumes just 17μA of quiescent supply current using only three external components. This device achieves a typical startup voltage of just 1V, making it ideal for applications operating from 1 or 2 alkaline cells.
This device incorporates an internal synchronous rectifier, and achieves excellent peak efficiency of up to 89% and features a proprietary control scheme that ensures high efficiency over a wide load current range.
The ACT6308 features pin-selectable output voltages of 3.3V or 5V, or it can also be set externally to any voltage between 2V and 5V. The ACT6308 is available in a tiny SOT23-5 package.

FEATURES
*1V Typical Startup Voltage
*Up to 89% Efficiency
*Fully Integrated Power Stage
*Fixed 3.3V/5V or Adjustable Output Voltage
*NanoStandbyTM Shutdown Mode
*Tiny SOT23-5 Package
− RoHS Compliant Package

APPLICATIONS
*Hand-Held Devices
*One to Three Cell Battery Operated Devices
*PDAs
*Cellular Phones
*Digital Cameras
*GPS

ACT6308UC-T  

ACT6308-Low Input High Efficiency Synchronous Step-Up DC/DC Converter

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APU3146 - DUAL SYNCHRONOUS PWM CONTROLLER WITH CURRENT SHARING CIRCUITRY AND AUTO-RESTART

Advanced Power Electronics 2008/06/21 09:59

DESCRIPTION
The APU3146 IC combines a Dual synchronous Buck controller, providing a cost-effective, high performance and flexible solution.
The APU3146 can configured as 2-independent or as 2-phase controller.
The 2-phase configuration is ideal for high current applications.
The APU3146 features 180 out of phase operation which reduces the required input/output capacitance and results to few number of capacitor quantity.
Other key features offered by this device include two independent programmable soft starts, programmable switching frequency up to 500KHz per phase, under voltage lockout function.
The current limit is provided by sensing the lower MOSFET's on-resistance for optimum cost and performance.

FEATURES
* Dual Synchronous Controller with 180 out-of-phase
* Configurable to 2-Independent Outputs or 2-Phase Single Output
* Current Sharing Using Inductor's DCR
* Current Limit using MOSFET's RDS(ON)
* Hiccup/Latched Current Limit
* Latched Over-Voltage Protection
* Vcc from 4.5V to 16V Input
* Programmable Switching Frequency up to 500KHz
* Two Independent Soft-Starts/Shutdowns
* 0.8V Precision Reference Voltage Available
* Power Good Output
* External Frequency Synchronization

APPLICATIONS
* Embedded Computer Systems
* Telecom Systems
* Point of Load Power Architectures  

APU3146 - DUAL SYNCHRONOUS PWM CONTROLLER WITH CURRENT SHARING CIRCUITRY AND AUTO-RESTART

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