Article List :  Silicon : 23 posted

UTC9012 - PNP EPITAXIAL SILICON TRANSISTOR

Unisonic 2008/09/29 09:58

FEATURES
*High total power dissipation. (625mW)
*High collector current. (-500mA)
*Excellent hFE linearity
*Complementary to UTC 9013

 

UTC9012 - PNP EPITAXIAL SILICON TRANSISTOR

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ZXT12P40DX - DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Zetex 2008/06/27 09:19

DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.
This makes it ideal for high efficiency, low voltage switching applications.

FEATURES
* Extremely Low Equivalent On Resistance
* Extremely Low Saturation Voltage
* hFE characterised up to 5A
* IC=2A Continuous Collector Current
* MSOP8 package

APPLICATIONS
* DC - DC Converters
* Power Management Functions
* Power switches
* Motor control

ZXT12P40DXTA
ZXT12P40DXTC
 

ZXT12P40DX - DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

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SP725 - Silicon Protection Arrays

Littelfuse 2008/04/26 10:58

Description
The SP725 is an array of SCR/Diode bipolarstructures for ESD and overvoltage protection of sensitive inputs circuits.
The SP725 has 2 protection SCR/Diode device structures per input.
There are a total of 4 available inputs that can be used to protect up to 4 external signal or bus lines.
Overvoltage protection is from the IN (Pins 1 - 4) to V+ or V-.
The SCR structures are dusigned for fast triggering at athreshold of one +VBE diode threshold above V+ (Pin 5,6) or one -VBE diode threshold below V- (Pin 7,8).
From an IN input, a clamp to V+ is activated if a transient pulse causes the input to be increased to a voltage level greater than one VBE above V+.
A similar clamp to V- is activated if a negative pulse, one VBE less than V-, is applied to an IN input.
Refer to Fig 1 and Table 1 for further detaels.
Refer to Application Note AN9304 and AN9612 for furter detail.

Features
* ESD interface per HBM Standards
- IEC 61000-4-2, Direct Discharge...........8kV (Level 4)
- IEC 61000-4-2, Air Discharge..............15kV (Level 4)
- MIL-STD-3015.7.............................................25kV
* Peak Current Capability
- IEC 61000-4-5 8/20 ㎲ Peak Pulse Current.....± 14 A
- Single Transeint Pulse, 100㎲ Pulse Width ......± 8 A
* Designes to Provede Over-Voltage Protection
- Single-Ended Voltage Range to .....................+ 30V
- Differential Voltage Range to...........................±15V
* Fast Switching....................................2ns Risetime
* Low input Leakages..................5 nA at 25˚C Typical
* Low input Capacitance.........................5 ㎊ Typical
* An Array of 4 SCR/Diode Pairs
* Operating Temperature Range...........-40 ˚C to 105 ˚C

Applications
* Microprocessor/Logic
* Data Bus Protection
* Analog Device input Protection
* Voltage Clamp

SP725ABG
SP725ABTG

 

SP725 - Silicon Protection Arrays

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SM5102 - OEM Silicon Pressure Die

ETC 2008/02/23 09:21

DESCRIPTION
The SM5102 is a silicon micro-machined, piezoresistive pressure-sensing chip. These devices are available in full-scale ranges from 5 to 300 psi and are ideal for OEM and high volume applications.
Provided in die form, these sensors can be mounted on ceramic or PC board substrates as part of an OEM system. They also may be packaged into proprietary, or application specific sensor lines.
Die are probed, inked and diced, and shipped on tape.
Custom pressure ranges available in highvolume applications. Field-shield, high stability parts are also available on a custom-bases.

FEATURES
• High Volume, Low Cost
• Gage and Absolute Versions
• Constant Current or Constant Voltage Drive
• Millivolt Output
• 5, 15, 30, 60, 100 and 300 PSI Ranges Available

APPLICATIONS
• Altimeters
• Tire Gauges
• Medical Instrumentation
• Industrial Sensors
• Diving Modules
• Home Appliances

SM5102-015-A  

SM5102 - OEM Silicon Pressure Die

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TPS853 - Photo IC Silicon Epitaxial Planar

Toshiba 2007/12/14 09:58

The TPS853 is an ultra-compact surface-mount photo-IC for illuminance sensors which incorporates a photodiode and current amp circuit in a single chip.
The sensitivity is superior to that of a phototransistor, and exhibits little variation. It has spectral sensitivity closer to luminous efficiency and excellent output linearity.
With its ultra-compact surface-mount package, this photo-IC can be used as the power-saving control for domestic appliances or for backlighting for displays in cellular phones, this device enables low power consumption to be achieved.

· Ultra-compact and light surface-mount package suitable for lead-free soldering and reflow soldering: 2.0 × 2.1 × 0.7 mm
· Excellent output linearity of illuminance
· Little fluctuation in light current and high level of sensitivity
: IL = 37 μA to 74 μA @EV = 100 lx using fluorescent light
: Light current variation width: ×1.67 (when light current classification is specified.)
: Little temperature fluctuation
· Built-in luminous-efficiency correction function, reduced sensitivity variations due to various light sources
: IL (using incandescent light)/IL (using fluorescent light) = 1.2 (typ.)
· Low supply voltage, making device suitable for battery-powered equipment: VCC = 2.2 V to 5.5 V  

TPS853 - Photo IC Silicon Epitaxial Planar

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TAG ic, Photo, Silicon